Development of Thin-Film Active Devices on an Improved Insulating Substrate.
Abstract
It is the objective of this program to develop the capability of epitaxially depositing, on spinel substrates, single crystal silicon films which have superior electrical characteristics for various device applications to the characteristics of either silicon films on silicon, or silicon films on sapphire. The silicon on spinel composite structure is evaluated in various test device structures in the effort to provide sufficient electrical data to anticipate the applicability of this semiconductor on insulator system to any of the device configurations of interest. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1968
- Accession Number
- AD0845649
Entities
People
- Glen W. Cullen
Organizations
- Sarnoff Corporation