Measurements of the Effective Diffusion Length of Minority Carriers in Thin Semiconductor Wafers,
Abstract
The report presents two new methods of measuring the effective diffusion lengths of minority carriers in thin semiconductor wafers. The methods are specifically suitable for measuring very short effective diffusion lengths and enable one, in addition, to measure this parameter in those small thin wafers which are then used (without any alteration of size) for the fabrication of a transistor or a diode. In addition, these methods permit us to measure this parameter after the wafer has undergone certain further processing, for example, after one entire wafer surface has been soldered to a metal substrate. In principle, that measurement can be done nondestructively.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 12, 1968
- Accession Number
- AD0846856
Entities
People
- Alfred Swit
Organizations
- National Air and Space Intelligence Center