Low-Temperature Epitaxy of Silicon Junctions by Ultra-High Vacuum Techniques.

Abstract

Studies of the structural and electrical properties of homoepitaxial films and junctions grown at low temperatures by sublimation in ultrahigh vacuum have been made. The crystallographic and electrical qualities of ultrahigh vacuum sublimed silicon make possible the growth of junction structures at temperatures far lower than heretofore reported. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1968
Accession Number
AD0847483

Entities

People

  • M. H. Francombe
  • R. N. Thomas

Tags

DTIC Thesaurus Topics

  • Critical Temperature
  • Electrical Properties
  • Glass Transition Temperature
  • High Vacuum
  • Low Temperature
  • Sublimation
  • Transition Temperature
  • Ultrahigh Vacuum
  • Vacuum

Readers

  • Electronics Engineering
  • Semiconductor Device Technology