50 Ampere Turn-Off Switch.
Abstract
The improvement of the fabrication process for the gate controlled switch has been performed as planned. The control of silicon wafer flatness, the attainment of the blocking voltage above 1000V at low leakage and a significant reduction of cathode gate shorts are described. The evaluation of the gate drive characteristics is initiated this quarter. It is emphasized that the cathode gate junction should not be driven into avalanche. In addition, the rate of rise of the gate pulse must be controlled to improve the switching time, gain and maximum turn-off current. With a 7.5 microhenry inductance in the gate circuit, the load current is substantially turned off in 4 microseconds by devices without gold doping. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 15, 1968
- Accession Number
- AD0847733
Entities
People
- Thorndike C. New
- Timothy J. Desmond
Organizations
- Westinghouse Electric Corporation