Radiation Defects in Semiconductors,
Abstract
The article cursorily reviews theoretical concepts about the processes associated with the origin of radiation defects in semiconductors and deals specifically with the nature of radiation defects and experimental investigations of radiation defects in semiconductors. Experimental methods are discussed, in particular the determination of the threshold energy necessary for the production of a defect as well as the possibility of determining the energy spectrum of the level belonging to the defects in the forbidden zone, and also the nature and the stability of the defects. The greatest attention is given to the photoelectric investigation methods and to recently acquired data on the interaction between radiation defects and foreign atoms in homeopolar semiconductors such as silicon and germanium. The 'fate' of the initially displaced atoms has been largely clarified through investigations involving the irradiation of germanium at low temperature.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1968
- Accession Number
- AD0848785
Entities
People
- V. S. Vavilov
Organizations
- National Air and Space Intelligence Center