A Simple Characterization of Gate-To-Substrate Impedance in Metal-Oxide-Semiconductor Structures Under Nonequilibrium Conditions.
Abstract
Common to all MOS field-effect transistors and gate-controlled diodes is a metallurgical junction adjacent to the field-influenced semiconductor surface. This junction plays a very important role in determining the nature of the space-charge region beneath the entire gate. A reverse biased junction can create a condition of nonequilibrium in this region and can also act as a primary source of minority carriers for the formation of an inversion layer. This leads to the possibility of lateral ac potential variations along the surface. A distributed model is proposed to describe the influence of a reverse biased junction on the gate-to-substrate impedance measurements of an MOS device, and expressions are developed to facilitate application to actual devices. This model is capable of predicting the effects of measurement frequency, gate-to-substrate bias, junction reverse bias, and device geometry. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1968
- Accession Number
- AD0849045
Entities
People
- Kent William Andres
Organizations
- Stanford University