Study of Generalized, Lumped Transistor Models for Use with SCEPTRE.
Abstract
A family of bipolar transistor lumped models was derived and successfully evaluated for SCEPTRE analysis. Application of these models will allow accurate representation of electrical performance and radiation-induced transient response. The most important improvements over existing SCEPTRE models are in the more accurate representations of the physical effects controlling electrical and radiation-induced storage time, and in the direct prediction of the transistor detailed radiation-induced response from the ionizing radiation intensity. SCEPTRE-compatible models were also derived for the transistor and diffused resistor elements of integrated circuits. The transistor models are straight-forward extensions of the discrete transistor models developed. Diffused resistor models were developed and evaluated for the elements of multiple-chip, dielectric-isolation, and junction-isolated integrated circuits. Models are suggested for the important second-order effects of radiation-induced shunt current flow between segments of the resistor and conductivity modulation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1969
- Accession Number
- AD0849595
Entities
People
- James P. Raymond
- Robert E. Johnson