Development of Avalanche Oscillators at 10 GHz and 18.3 GHz.
Abstract
Tunable avalanche oscillators for X- and Ku-bands with silicon avalanche diodes are described. The output power exceeds 200 mW for all oscillators, the highest power measured is over 300 mW. Wide-band tuning in X-band is accomplished in a low-Q resonator whereas limited tuning is possible in a high-Q cavity. The Ku-band oscillator allows for small-band tuning at about 18 GHz. Data on avalanche diode development as well as on noise measurements are described in separate sections of the report. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 18, 1969
- Accession Number
- AD0850999
Entities
People
- J. Noisten
- P. C. Whitman
- W. J. Moroney
Organizations
- M/A-COM Technology Solutions