Development of Thin-Film Active Devices on an Improved Insulating Substrate.
Abstract
A detailed study has been made of the effect of deposition conditions on the properties of 1.5-2.0 micron thick silicon films epitaxially grown on single crystal magnesium aluminate spinel substrates. The carrier mobility and the change of mobility during oxidation for 1 hr at 1100C have been used to monitor the film quality and to provide an indication of the usefulness of the composite material in device structures. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1969
- Accession Number
- AD0851835
Entities
People
- Glenn W. Cullen
Organizations
- Sarnoff Corporation