Properties and Application of SiC-Base Heaters for the Production of Glass-Metal Bonds,
Abstract
The properties and use of silicon carbide heating elements for the production of the glass-to-metal bonds encountered in semiconductor manufacturing technology (all-glass point-contact diodes, for example) are discussed; the advantages of SiC over metallic materials are briefly cited. The production stages involved in producing loop-shaped SiC heating elements from flat, plate-shaped basic material are described, the temperature function of the electrical resistance of the heater is analyzed, and other electrical characteristics of the element are reviewed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 06, 1969
- Accession Number
- AD0852151
Entities
People
- H. Gruban
- W. Heckert
Organizations
- National Air and Space Intelligence Center