Improved Insulators for IC Technology.
Abstract
Silicon dioxide is, at present, almost exclusively used as the dielectric thin-film materials for semiconductor device fabrication. However, there is still a need for an improved insulator which can advance the state-of-the-art of integrated-circuit technology. Plasma-anodization of aluminum on silicon has shown promise in this respect. During this reporting period the characterization of the film fabrication technique was initiated. Major emphasis was placed on correlating certain film properties with the parameters of the anodization process. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1969
- Accession Number
- AD0852161
Entities
People
- K. H. Zaininger
- P. Rappaport
Organizations
- Sarnoff Corporation