Compensation and Avalanche Techniques for Tree Hardening. Volume II. Nuclear Damage on Avalanche Transistors and Diodes
Abstract
An analytical model to describe the behavior of a forward biased or reverse biased (including avalanche breakdown) diode in a transient X-ray environment is developed. The calculated results are compared with experimental results. The avalanche multiplication phenomenon is related to the physical parameters of the device. Equivalent circuits for the device under irradiation are developed. The basic theory of avalanche transistor operation is reviewed and the critical design factors for operation of an avalanche circuit in a radiation environment are discussed. The circuits were tested in the range from 1,000,000 R/sec to over 10 to the 10th power R/sec. Circuits were tested with and without different types of junction compensations. Avalanche diodes and transistors were also irradiated in a neutron environment. Some of the diodes and transistors were still functioning properly at doses of 8.6 10 to the 15th power nvt. An avalanche circuit was shown to be relatively insensitive to a neutron environment after exposure to neutron fluence in excess of 10 to the 15th power n/sq cm. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1969
- Accession Number
- AD0852788
Entities
People
- Goebel Davis Jr.
- Harold T. Cates
- L. T. Boatwright
- Wayne W. Grannemann
Organizations
- University of New Mexico