Research to Investigate the Mechanisms of Transient Radiation Induced Latchup in Integrated Circuits.

Abstract

A study was made of integrated circuit (IC) structures which are susceptible to ionizing-radiation-induced latchup. Structures exhibiting PNPN action, transistor sustaining voltage breakdown, and second breakdown were evaluated. The usefulness of laboratory electrical testing techniques to identify latchup-prone structures was established. It is concluded that certain design and testing procedures can establish a high level of confidence in the radiation resistance of a given IC type to latchup-mode failures. Recommendations are made concerning these procedures. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1969
Accession Number
AD0852862

Entities

People

  • James F. Leavy
  • Robert A. Poll

Organizations

  • Utility Systems Science and Software (United States)

Tags

DTIC Thesaurus Topics

  • Buildings And Structures
  • Circuits
  • Electronics Laboratories
  • Integrated Circuits
  • Ionizing Radiation
  • Radiation
  • Radiation Resistance
  • Research Facilities
  • Resistance
  • Transistors

Fields of Study

  • Engineering
  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design