5-Kilowatt, 1-Kilovolt, Laminated Sonar Transistor.
Abstract
The technical approaches that will be taken to develop a 5-kilowatt sonar transistor are discussed. Pellett and package designs to optimize the 1-kilowatt transistor developed under a previous contract are described. The design changes were made primarily to improve second breakdown at low currents and high voltages. Initial experiments on the use of preferential etching to form the emitter structure are discussed. The process appears feasible and should result in improved emitter designs. Measurements of H sub FE vs. I sub C, which show that the falloff is dominated by base widening, are included. Mechanical changes made to simplify the process are also described. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1969
- Accession Number
- AD0853206
Entities
People
- Hans W. Becke
- Joseph P. White