Research and Development of Semiconductor Diodes for Use in Harmonic Generator Applications Using Single Diodes.
Abstract
A distributed junction for the high power varactor diode is described. The junction is in the form of an array of parallel stripes connected as in a comb and is of mesa construction. The passivation is thermally grown silicon dioxide. Problems in resolving fine geometries using the mesa approach are discussed. Practical mask designs are shown. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1969
- Accession Number
- AD0853973
Entities
People
- Henri R. Chalifour
- Thomas R. Lally
Organizations
- M/A-COM Technology Solutions