Transport Equations for Electrons in Two-Valley Semiconductors.

Abstract

Transport equations are derived for particles, momentum and energy of electrons in a semiconductor with two distinct valleys in the conduction band, such as GaAs. Care is taken to state and discuss the assumptions which are made in the derivation. The collision processes are expressed in terms of relaxation times. The accuracy is improved by considering these to depend on the average kinetic energy rather than the electron temperature. Other transport equations used in the literature are discussed, and shown to be incomplete and inaccurate in many cases. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1969
Accession Number
AD0855137

Entities

People

  • Kjell Blotekjaer

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Conduction Bands
  • Electrons
  • Energy
  • Energy Bands
  • Equations
  • Kinetic Energy
  • Relaxation Time
  • Semiconductors
  • Transport Ships

Readers

  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Plasma Physics / Magnetohydrodynamics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics