High Capacitance Thin Film Structures.
Abstract
Thin-film metal-nickel oxide-metal capacitors have been prepared with the objective specific capacitance of 10 micro F/sq. in. in a multiple deposition apparatus that permits fabrication of the complete capacitors without exposure to an uncontrolled atmosphere. Current work is devoted to determining the reproducibility of the fabrication process, to the initiation of operational tests and to experiments required to refine the physical model. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1969
- Accession Number
- AD0858382
Entities
People
- Alfred E. Feuersanger
- Moe S. Wasserman