Neutron-Irradiation Damage in Gold-Doped Silicon.
Abstract
Neutron damage factors for gold-doped silicon were determined from carrier lifetime measurements in P+NN+ diodes doped with gold atom concentrations between 6x10 to the 15th power/cc and 4x10 to the 16th power/cc. The neutron damage factor was obtained for the undoped diodes at high injection. An empirical relation which describes the recombination rate as a function of the concentration of gold atoms and neutron fluence was also derived. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1969
- Accession Number
- AD0858391
Entities
People
- Jeffry L. Guidry
Organizations
- Air Force Institute of Technology