Thin-Film Field-Effect Transistors,

Abstract

Thin-film transistors with an insulated gate may be produced by thermal vaporization under vacuum. Onto a glass or quartz substrate are vaporized the metal electrodes of the source and drain separated by a space of up to several tens of microns. Onto these electrodes is deposited a semiconductor film, then an insulator, and finally a film of metal forming the electrode of the gate. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 10, 1969
Accession Number
AD0859588

Entities

People

  • J. Rybinski

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electrodes
  • Field Effect Transistors
  • Films
  • Metal Oxide Semiconductors
  • Semiconductor Devices
  • Semiconductors
  • Thin Film Transistors
  • Thin Films
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Plasma Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space
  • Space - Hall-Effect Thruster