Transient-Radiation-Induced Latchup in Microcircuits.
Abstract
Research on the pnpn action as a cause of latchup in junction-isolated integrated microcircuits was accomplished both experimentally and on the computer. Four different types of integrated circuit construction were studied. Electrically induced pnpn switching was obtained between isolated components. Parasitic transistor measurements can indicate when switching will occur, but important exceptions were observed. Ionizing irradiation could cause latchup in these isolated pnpn paths even with a reverse bias on the substrate. Incipient latchup, variation between identical devices, and long turn-on times were also demonstrated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1969
- Accession Number
- AD0859967
Entities
People
- Handy Horiye
- Robert A. Berger