100 Watt PEP Insulated-Gate Field-Effect Transistor for Operation from a 28-Volt Supply.
Abstract
The primary objective of the work is to develop an MOS transistor capable of a power output (PEP) of 100 watts in the frequency band from 2 to 32 megahertz when operated from a 28-volt power supply. The secondary purpose of the work is to improve both the yield and reliability of n-channel MOS transistors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1969
- Accession Number
- AD0860733
Entities
People
- Norman H. Ditrick