Radiation Effects in Dielectric Materials.
Abstract
Test on sapphire samples under irradiation show that sputtered-silver contacts demonstrate nearly as much polarization as ion-cleaned evaporated contacts, and that there is no polarization apparent in irradiation of Czochralski-sapphire samples with epitaxial silicon layers. Calculations on irradiation data from a Czochralski-sapphire sample yield a trap density in this material of about 6 x 10 to the 14th power/cc with a trapping cross section of about 1.4 x 10 to the -14th power/sq. cm. Other calculations with these data indicate that the range of the ionized secondary electrons in this material is about 1000A. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1969
- Accession Number
- AD0860916
Entities
People
- John W. Harrity