Single Crystal Silicon Ribbon Pilot Line.
Abstract
During the contract period, capability of producing single crystal ribbons with several standard orientations has been achieved. Control of thickness and width tolerances have met basic contract goals. Resistivity control of approximately plus or minus 20% was attained, comparable to conventional silicon material technology. Studies of dopant diffusion in ribbon material demonstrated that accurate control of junction characteristics could be maintained. Major effort was directed toward extending ribbon growth techniques to a width of one inch and to continuous operation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1969
- Accession Number
- AD0861246
Entities
People
- James C. Boatman
- Rodney D. Wood
Organizations
- Texas Instruments