100 Watt PEP Insulated-Gate Field-Effect Transistor for Operation From a 28-Volt Supply.

Abstract

Photomasks for the test transistor structure were received, evaluated, and accepted. These photomasks were used to process two lots of wafers. A processing technique was established by using a smaller 5-watt structure. After five lots of the smaller units were fabricated, processing was stopped. All current effort is on a larger test structure, which should be capable of a power output of 20 to 25 watts. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1969
Accession Number
AD0862428

Entities

People

  • Norman H. Ditrick

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Engineering
  • Field Effect Transistors
  • Transistors

Readers

  • Computer Science/Computer Engineering/Data Science/Digital Signal Processing.
  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics