The Formation and Characteristics of a Broad-Area Semiconductor Field Emission Cathode.
Abstract
The work is a study of the formation, operation and application of a semiconductor field emission cathode consisting of one or more individual emitting points on a broad area cathode. The material primarily used was germanium. Two methods of forming these cathodes were studied; a vacuum breakdown method and one using radiation from a pulsed ruby laser focused on the cathode surface. The former is the method by which the cathode was first revealed. The latter holds the most promise for making cathodes practical. Both types of cathodes were observed with a scanning electron microscope to aid in understanding the mechanism by which the very regular emitting points are formed. The electrical characteristics of the cathode were studied experimentally and found to agree with theory of semiconductor field emission. A retarding potential analyzer was designed and built to measure the energy distribution for electrons emitted from individual points on the cathode. An electron optical system was used to study the operation of the semiconductor cathode as an electron source for such applications as in a cathode ray tube or similar device requiring a low-current electron beam. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1969
- Accession Number
- AD0863006
Entities
People
- John W. Hanson
Organizations
- Cornell University College of Engineering