Feasibility Study of Return to Original-State Principle.
Abstract
The design and fabrication of dielectrically isolated integrated-circuit transistors with a primary photocurrent of 3-5 mA at a dose rate of 10 to the 11th power rad(Si)/sec and a secondary photocurrent threshold of greater than 10 to the 11th power rad(Si)/sec are described. The problems encountered in evaluating the photocurrent sensitivity of these devices in an X-ray and a neodymium laser environment are discussed. The computer-aided design of a hardened RS flip-flop with photocurrent compensation and with a state-recovery circuit is described. The response of the flip-flop to a computer simulated radiation pulse is described. The computer model of the flip-flop predicts operation at a dose rate of 10 to the 11th power rad(Si)/sec and a state-recovery ability after a radiation pulse with a peak dose rate of 10 to the 12th power rad(Si)/sec. The performance of the dielectrically isolated flip-flop in the radiation environment of the WSMR LINAC, the Autonetics 2 MeV flash X-ray, and the TI Nd laser is discussed. The flip-flops were capable of being switched on clock command during an ionizing radiation pulse with a dose rate of 1.6 X 10 to the 11th power rad(Si)/sec. The flip-flops were capable of returning to their pre-radiation state after a radiation pulse with a peak dose rate less than 4 X 10 to the 11th power rad(Si)/sec. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1969
- Accession Number
- AD0863201
Entities
People
- Walter T. Matzen
Organizations
- Texas Instruments