Investigation of Short-Term Annealing with APFA-III.
Abstract
Short-term annealing in n on p silicon solar cells was studied over the time regime from 10 microseconds to 1000 seconds following an irradiating neutron pulse. The effects of injection level on the observed annealing were ascertained. No differences due to dopant or crystal growth technique were apparent except for the highly doped (1 ohm-cm) samples at very low injection levels. A model is proposed in which the observed lifetime degradation is attributed to the neutral vacancy concentration or the properties of the cluster related to the neutral vacancy concentration and the annealing rate to the negative vacancy concentration. A measured activation energy for the annealing of 0.27 eV is in agreement with this model. Anneal Factor (AF) dependence on temperature was measured. Very low values of AF (approximately 3) were measured at 80 degrees K. Anneal Factors greater than 40 were measured in room temperature experiments. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1969
- Accession Number
- AD0864430
Entities
People
- C. E. Mallon
- J. A. Naber
- J. W. Harrity