Advanced Concepts of Microwave Generation and Control in Solids.
Abstract
The continuing study of GaAs LSA devices in circuits with the aid of several computer programs and an analysis has been made, as a function of parameters, using I-V effects representing space-charge accumulation. Refined results for calculation of dc electric field as a function of position are presented for two-frequency LSA. Gunn effect diodes capable of average input powers up to 10 watts with CW output powers up to 120 mW have been studied and a protective 'crowbar' is discussed. Electronic tuning of LSA oscillations with bias and temperature is discussed, along with critical skin depth effects. A technique for estimating the effective thermal resistance of thick devices is presented. Development of the pulse bridge to be used for high electric field magnetoresistance measurements is nearly complete. A simplified model for avalanche resonance pumped semiconductor diodes has been developed in terms of its voltage current relation and its equivalent circuit. Schottky barrier avalanche diodes have been fabricated. Hot electron diffusion theory in Silicon was continued and N+ - P junctions constructed for tests of the theory. Techniques work at obtaining millimeter waves from bulk indium antionide is discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1969
- Accession Number
- AD0864890
Entities
People
- G. C. Dalman
- L. F. Eastman
Organizations
- Cornell University College of Engineering