Improved Insulators for IC Technology.
Abstract
Plasma anodization of aluminum on silicon has shown promise in advancing the state-of-the-art of integrated-circuit technology. A detailed study was carried out in the areas of (1) characterization of the film fabrication technique, (2) characterization of the film, (3) fabrication of MOS capacitors and transistors, and (4) permanent radiation damage. It was found that initial silicon-wafer preparation and cleaning are important for achieving interface and oxide film perfection. Furthermore, it is essential that the anodization of the aluminum film on silicon be carried out to completion without application of an excessive overvoltage. This was achieved by close control of aluminum film thickness and establishment of anodization rates. Monitoring of the wall potential by means of a plasma probe was essential to accomplish this. As evidenced by C-V and C-V measurements, the plasma-grown Al2O3 (1) forms an almost ideal interface with the silicon substrate, with interface state densities in the low 10 to the 10th power states/sq cm-eV range, and (2) shows no evidence of ionic motion under a bias temperature stress. MOS transistors, fabricated with plasma-grown Al2O3 as gate insulator, could withstand a radiation exposure which is at least an order of magnitude larger than the maximum tolerable level for SiO2 devices. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1970
- Accession Number
- AD0865125
Entities
People
- Karl H. Zaininger
- Peter E. Norris
Organizations
- Sarnoff Corporation