High Capacitance Thin Film Structures.
Abstract
Experimental work was devoted to clarification of the physical model for the high specific capacitance. Replacement of the aluminum base electrode by nickel reduced the resistance of the capacitor. This result supports the view that an insulating Al2O3 film exists at the Al-NiO interface. The proposed model predicts a temperature dependence that agrees well with experiment, and suggests an approach to reducing leakage current without sacrificing capacitance. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1970
- Accession Number
- AD0865556
Entities
People
- Alfred E. Feuersanger
- Moe S. Wasserman