Gunn Oscillators with Slightly Inhomogeneous Doping Profile.
Abstract
Doping variations influence the domain propagation in Gunn devices. Computer calculations on devices operated in resonant circuits below the transit time frequency of the device, have revealed that even small doping variations in the direction of domain propagation are important for device performance. Two cases with linearly and sinusoidally varying doping profile are treated. For the case with linearly varying doping profile the polarity of the device determines whether the performance is improved or reduced relative to the homogeneous sample. For a sinusoidal doping the situation is more complicated; it is, however, possible to improve device performance significantly. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1969
- Accession Number
- AD0865669
Entities
People
- Agne Nordbotten
Organizations
- Norwegian Defence Research Establishment