Large-Signal Impedances of Avalanche Diode Oscillators.
Abstract
The large-signal impedances of a silicon avalanche diode were measured in the 8-12 GHz region with the device operating in the active mode. A commercial diode was used to generate more than 20 mW CW at efficiencies up to 1.5 percent in a specially constructed coaxial cavity. Precise circuit measurements permitted the resolution of diode negative resistance and reactance values and indicated values of negative resistance as high as -2100 ohms at the resonant frequency. The measured values are compared with those predicted by a cascade-type model of avalanching regions. The relation between the theoretical small-signal impedance and the calculated large-signal impedance is indicated, as well as the application of these data to the design of avalanche diode oscillators. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1970
- Accession Number
- AD0865681
Entities
People
- Gary S. Ash
Organizations
- Cornell University College of Engineering