Development of Microwave Semiconductor Noise Diode and Diode Holder.
Abstract
A microwave integrated circuit, solid state noise source has been designed and tested between the frequency of 8 to 12.4 GHz. Results of the output spectrum noise measurements are presented for temperature variations of -54C to +85C. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1970
- Accession Number
- AD0867480
Entities
People
- J. C. Collinet
Organizations
- M/A-COM Technology Solutions