Neutron Damage in Gunn Effect Devices.
Abstract
A number of gallium arsenide Gunn diodes were exposed to neutron irradiation over a fluence range from 1.6 x 10 to the 13th power to 1.9 x 10 to the 14th power n/sq cm (E > 10 keV). Parameters measured were the diode current-voltage characteristic, frequency, and output power. From the low-field resistance an unusually high carrier removal rate of 20/cm was calculated. Output power and efficiency decreased linearly with increasing dose until catastrophic device failure occurred at approximately 10 to the 14th power n/sq cm (E > 10 keV). The oscillating frequencies did not noticeably change. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1970
- Accession Number
- AD0868893
Entities
People
- Horst P. Bruemmer
Organizations
- United States Army Communications-Electronics Command