5-Kilowatt, 1-Kilovolt, Laminated Sonar Transistor.
Abstract
Several changes were incorporated into the processing of the laminated transistor for the sake of simplification and yield improvement. These changes included: etching of the emitter structure in place of ultrasonic cutting; simplification of mechanical processing; and shortening of the lamination cycle. Several design modifications also were evaluated. Although these modified transistors had significantly higher power-dissipation capability (600 watts) and maximum-current capability (up to 30 amperes) than the smaller Design II devices fabricated previously (350 watts, 12 amperes), second-breakdown performance was not improved significantly. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1970
- Accession Number
- AD0869503