UHF PNP Power Transistor.

Abstract

The objective of this contract was to develop the processing techniques for the fabrication of a PNP RF power transistor to serve as a complement to already existing NPN transistor structures. The transistor was to meet the following requirements: 15 watts minimum output at 400 MHz with 6 dB gain; Transistor dissipation, 25 watts at stud temperatures up to 75C; Nominal operating voltage 28 to 32 volts; and Low inductance hermetic package. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1970
Accession Number
AD0869996

Entities

People

  • Lloyd Hackley

Organizations

  • Motorola Mobility

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Bipolar Junction Transistors
  • Contracts
  • Dissipation
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Fabrication
  • Inductance
  • Npn Transistors
  • Power
  • Radio Frequency Power
  • Semiconductor Devices
  • Transistors

Readers

  • Aerospace Test and Evaluation
  • Integrated Circuit Design and Technology.