Evaluation of a Neutron Damage Prediction Technique.
Abstract
The results of an in-house testing program conducted at the Air Force Weapons Laboratory (AFWL) to ascertain the validity of the techniques and procedures outlined in AFWL-TR-67-54, which is a handbook for predicting semiconductor device performance in a neutron environment are included in this report. Irradiation tests were conducted at the White Sands Missile Range Fast Burst Reactor Facility. Transistors and diodes selected from several manufactures using various construction techniques were tested. The test results were generally those that were expected, keeping in mind the limitations outlined in the prediction handbook (i.e., high-frequency devices, other than planar construction, etc.). A PNP damage factor curve is now available. The junction carrier removal rate coefficient has been expanded into a curve covering a wide range of fluence and doping levels. The calculation of emitter junction areas from electrical measurements is included as an alternate method to microphotography or acquiring the area from a manufacturer. Damage factor spreads have been reduced for nontypical devices by normalizing on the product of emitter current density and base transit time (JEt). It is concluded that the prediction of neutron degradation to bipolar transistors is practical and worthwhile.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1970
- Accession Number
- AD0870142
Entities
People
- Charles E. Ramsey Jr.
- Daniel G. Emdee
Organizations
- Air Force Research Laboratory