Integrated Tunnel Diode Amplifiers for X-Band Applications.
Abstract
The objective of this contract was to develop an Integrated Tunnel Diode Amplifier for X-Band applications. The general approach taken to achieve the goals of this contract was to use an extension of the inverse sandwich tunnel diode structure developed by the General Electric Company on an earlier contract. This approach incorporates the tunnel diode as an integral part of the amplifier substrate, allowing for integration of the amplifier circuitry. The important feature here is that the tunnel diode junction is formed between the transmission line and the ground plane, minimizing diode inductance and eliminating case capacitance. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 10, 1970
- Accession Number
- AD0872175
Entities
People
- B. E. Wallace
- Chul Soo Kim
- E. Baum
- I. C. Chang
- N. Adams
Organizations
- General Electric