Electron-Beam-Bombarded Silicon PN-Junction Diodes.
Abstract
Silicon-diode PN junctions under electron-beam bombardment exhibit current gains, resolution characteristics, and risetimes applicable to imaging devices. A number of PN junction diodes, the largest being 1 sq cm, were investigated for their current-gain characteristics under static and scanned electron beams. A test vehicle built in a demountable vacuum system is described. Photographic data are presented for an electron-beam-scanned diode showing a nonuniform current-gain variation. Diode static gain-characteristic curves are shown for bombarding voltages up to 9 kV. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1970
- Accession Number
- AD0873132
Entities
People
- Philip F. Krzyzkowski
Organizations
- United States Army Communications-Electronics Command