Radiation Hardened Silicon Power Transistors,
Abstract
Observations of specific gain degradation mechanisms in neutron irradiated transistors are reported. Special emphasis is placed upon the influence of collector design on high current characteristics. Neutron irradiation results are presented for two power transistor designs. A 5-ampere, 100-volt device performed well after irradiation to 3 x 10 to the 14th power n/sq cm (E>10 keV, fission spectrum). A 150-volt device exhibited low saturation voltage up to 40 amperes after irradiation to 1 x 10 to the 13th power n/sq cm (E>10 keV, fission spectrum), and can be enlarged to 50-ampere capability. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 15, 1970
- Accession Number
- AD0873147
Entities
People
- Lowell Clark
- William George
Organizations
- Motorola Mobility