Growth and Characterization of Large High Purity Beta Silicon Carbide Single Crystals.
Abstract
The report summarizes the development program in the growth of large high purity beta silicon carbide crystals. Conditions for stable beta growth were partially established. Beta silicon carbide can be grown in the region of 2000-2200C and 28-42 microns pressure. Within this region, large beta crystals will grow by sublimation. Lang topographs of crystals were compared with etched surface structures and petrographic examination. Correlation among the results of these techniques was shown to exist. This analysis indicated the presence of large stacking faults within the structure as well as polytype intergrowths. Resistivity and Hall measurements were made with indications of highly compensated material. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1970
- Accession Number
- AD0874167
Entities
People
- A. L. Hannam
- K. Gerald Zimmerman
- Peter T. B. Shaffer
- Robert I. Harker
- William R. Harding