Research and Development of an Electron Beam Semiconductor Amplifier.
Abstract
Electron Beam Semiconductor Amplifier tubes designated as EE-124, were developed, tested and delivered. Techniques were developed which made it possible to combine, in one vacuum envelope, a grid controlled electron tube type structure, which was used as the input end of the EE-124, and an ion implanted silicon diode which when bombarded by the electron stream from the input structure, produced current gains of over 1000. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 07, 1970
- Accession Number
- AD0874545
Entities
People
- Peter Janis
- W. Harold Merritt