High Capacitance Thin Film Structures.
Abstract
The useful operating temperature range of the thin-film A1-NiO-Au capacitors was extended by reducing the NiO film thickness, in accordance with predictions of the physical model. The capacitors perform satisfactorily in an integrable breadboard oscillator circuit. The fabrication procedure established for use with quartz substrates also yields films on oxidized silicon substrates with a specific capacitance greater than micro F/sq in. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1970
- Accession Number
- AD0874716
Entities
People
- Alfred E. Feuersanger
- Moe S. Wasserman