Tunneling Spectroscopy Study of GaAs, CdS and ZnO Schottky Barrier Junctions.
Abstract
An experimental study was made of phonon spectra in GaAs, CdS, and ZnO by tunneling spectroscopy. Results on GaAs showed structure in the dV/dI and the second differential of V with respect to I curves at the TA, 2TA, LO phonon energies. The TA, LA, TO, and three branches of the TO phonon were identified in CdS, as well as several multi-phonon peaks and a zero-bias conductance maximum attributable to magnetic moments localized in the barrier region. The same zero-bias anomaly, and structure at the LO phonon energy were observed in ZnO. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1970
- Accession Number
- AD0875370
Entities
People
- David H. Amos
Organizations
- Air Force Institute of Technology