Magnetic and Dielectric Loss in Magnetic Insulators.
Abstract
Magnetic loss and electrical transport have been studied in a series of single crystals of Y3Si(x)Fe(5-x)O(12), 0<x<0.1 (Si-YIG). Single crystal 'picture-frame' samples were prepared for studies of domain-wall dynamics. Measurements of initial permeability, made over a temperature range 4 - 300K, reveal a temperature activated wall-damping identified with the valence-exchange loss process. Microwave resonance experiments over the range 300 - 550K reveal an anomalous loss peak identified with a four-level valence-exchange model. Evidence obtained from measurements of dc conductivity and Hall effect, over the temperature range 300 - 1000K, suggests that conduction in Si-YIG occurs via band conduction and not by electron hopping as previously believed. Crystals were grown both by the conventional flux procedure and by a new top-seeded solution method. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1970
- Accession Number
- AD0877012
Entities
People
- David J. Epstein
Organizations
- Massachusetts Institute of Technology