Production Engineering Measure Solid Encapsulated Semiconductor Devices.
Abstract
The objective of the contract is to develop and optimize production capability for the manufacture of small signal solid encapsulated transistors capable of performing to military specifications. Both NPS (device type D32D) and PNP (Device type D34E) transistors are being used as vehicles for the program. The optimization of the process for the application of a silicon nitride barrier to the NPN structure was completed. A high temperature metalization system was selected and the optimized process is briefly described in the report. The glassivation system optimization is essentially completed and is also discussed. Several preliminary reliability evaluations were conducted on the devices with the silicon nitride barrier and the beneficial effects of the barrier are described. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1970
- Accession Number
- AD0877175
Entities
People
- Byron L. Bair
Organizations
- General Electric