Contacts Between Chalcogenide Glasses, Metals and Semiconductors

Abstract

The two main purposes of the research here described are to elucidate the mechanism of threshold switching and to explore new device possibilities through the use of contact materials which can be electronically altered in situ. During the first six months of the contract period the work has consisted of three parts: one concerned with glass film deposition on graphite and germanium substrates by flash evaporation and R. F. sputtering, one with pulse measurements on existing threshold switches and one with an exploration of switching delay statistics.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1970
Accession Number
AD0878302

Entities

People

  • H. K. Henisch

Organizations

  • Pennsylvania State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amorphous Materials
  • Chalcogenide Glass
  • Contracts
  • Current Density
  • Energy
  • Films
  • Frequency
  • Glass
  • High Temperature
  • Low Temperature
  • Materials
  • Materials Laboratories
  • Polarity
  • Pulse Amplitude
  • Semiconductors
  • Space Charge
  • Thin Films

Readers

  • Computer Networking
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene