Fundamental Studies of Semiconductor Heteroepitaxy
Abstract
The report contains a fundamental study of the nucleation and film growth mechanisms in heteroepitaxial semiconductor thin films, and applies the results to the preparation of improved thin films and thin-film devices on insulating substrates. The program involves both theoretical and experimental investigations. The emphasis is on chemical vapor deposition (CVD) techniques.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 28, 1971
- Accession Number
- AD0879574
Entities
People
- Ralph P. Ruth