High-Temperature Solid-State Pressure Transducer.
Abstract
A piezoresistive silicon pressure sensor was developed for operation at elevated temperatures. The sensor design is based on a silicon diaphragm with p-type silicon strain gages bonded to the diaphragm by means of the thermally grown silicon dioxide. The thermally grown oxide (fused quartz) provides excellent mechanical bonding as well as electrical isolation from the diaphragm. The device operates from -55C to +350C with linearity, hysteresis, and repeatability less than 0.25% of full scale output. Test data indicate that the device is capable of operating with an error band of plus or minus 2% of full scale output from room temperature to 350C. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1970
- Accession Number
- AD0881000
Entities
People
- Gerald L. Vick