Coplanar Gunn Effect Devices.
Abstract
The purpose of this work was to develop a GaAs Sheet Gunn (Coplanar) device and circuit capability such that maximum power could be extracted from the device. Electronic tuning of the device over the 4.8 - 5.2 GHz range was also desired. Difficulties in growing N layer on semi-insulating substrates, and premature breakdown in finished devices even under pulsed conditions precluded achievement of the original contract objectives. The contract was redirected towards obtaining high power by means of amplifiers. Theoretical and experimental analysis of the Distributed Unidirectional Microwave Amplifier showed that this device offered one method of achieving the desired microwave power levels. A DUMA test vehicle employing six 0.7 W avalanche diodes demonstrated amplification at the 5-watt level, and showed electronic gain at powers as high as 9 W. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1971
- Accession Number
- AD0881063
Entities
People
- Marion E Hines
- Roger N. Wallace
- S. Francis Paik
- T. B. Ramachandran
Organizations
- M/A-COM Technology Solutions